Kioxia announced the launch of BiCS8 FLASH 2Tb QLC (Quad-Level Cell) flash memory based on the eighth-generation BiCS FLASH 3D flash memory technology, and samples are now available. It has the industry’s largest capacity of 2Tb (256GB), bringing storage capacity to a new level and promoting growth in multiple application areas, including artificial intelligence (AI).
Kioxia stated that the BiCS8 FLASH 2Tb QLC NAND flash memory is based on their latest technology, achieving a balance of vertical and horizontal scaling of storage chips through proprietary processes and innovative architecture. Kioxia introduced CBA (CMOS directly Bonded to Array) technology, developed in collaboration with Western Digital, where each CMOS wafer and cell array wafer are individually manufactured at their optimal state and then bonded together, providing enhanced bit density and industry-leading NAND I/O interface speed (3.6Gbps).
Compared to the fifth-generation BiCS FLASH QLC flash memory products, the bit density of the eighth-generation BiCS FLASH 2Tb QLC flash memory has increased by approximately 2.3 times, and write efficiency has improved by about 70%. Moreover, the new QLC product architecture can stack 16 chips in a single memory package, providing a capacity of 4TB with a more compact package design, measuring only 11.5 x 13.5 mm and 1.5 mm in height. This means that a single NAND flash chip can achieve a capacity of 4TB, and a single-sided M.2 SSD equipped with two chips can reach 8TB.
In addition to the 2Tb QLC flash memory, Kioxia has also introduced a higher-performance 1Tb QLC flash memory. Kioxia claims that the sequential write performance of the 1Tb QLC flash memory has been improved by about 30% compared to the 2Tb QLC flash memory, and read latency has been reduced by about 15%, making it more suitable for high-performance fields, including client SSDs and mobile devices.
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