Micron Technology has announced the commencement of mass production of its 9th generation (G9) TLC NAND solid-state drives, marking a significant step forward for the industry.
The G9 NAND boasts a transfer speed of 3.6 GB/s, enhancing performance for AI and data-intensive applications in personal devices, edge servers, enterprises, and cloud data centers.
Micron states that the shipment of G9 NAND demonstrates their expertise in process technology and design innovation. The density of G9 NAND has increased by 73%, with data transfer speeds improved by 50%.
It also features up to 99% write bandwidth and 88% read bandwidth, significantly boosting the performance and efficiency of solid-state drives and embedded NAND solutions.
Packaged in a compact 11.5mm x 13.5mm form factor, G9 NAND saves 28% more space compared to competing products, making it the smallest high-density NAND currently available.
Micron emphasizes its continuous leadership in introducing innovative NAND technology with the third generation. Products integrating Micron G9 NAND are expected to deliver significant performance advantages over competing solutions.
The Micron 2650 NVMe SSD, utilizing G9 TLC NAND, has surpassed competitors in testing. It approaches theoretical saturation levels of PCIe Gen 4, redefining the potential of TLC client SSDs with the new G9 NAND.
The Micron 2650 NVMe SSD delivers reliable performance and includes an acceleration cache feature for faster write speeds, benefiting from its dynamic SLC cache.
It achieves sequential read speeds of up to 7,000 MB/s with PCIe Gen 4, demonstrating a 70% increase in sequential read performance, a 103% increase in sequential write performance, a 156% increase in random read performance, and an 85% increase in random write performance.
These metrics highlight Micron’s commitment to advancing technology and providing high-performance solutions.
Source: G9 NAND | Micron Technology Inc.
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