According to yesterday’s news, German ferroelectric memory company FMC announced a strategic partnership with semiconductor company Neumonda to establish a new non-volatile memory chip (FeRAM) production line in Dresden, Germany.
This marks the first attempt to restart local production of memory chips in Europe since the bankruptcy and shutdown of Infineon and Qimonda’s German DRAM factories in 2009.
The core of the collaboration is FMC’s “DRAM+” technology. This technology uses hafnium oxide (HfO₂), compatible with sub-10nm process nodes, as the ferroelectric layer to replace the traditional lead zirconate titanate (PZT) material. It boosts storage capacity from the traditional 4–8MB FeRAM to Gb–GB levels while maintaining the ability to retain data without power.
Note: FeRAM is similar to SDRAM and is a type of random access memory technology. It uses a ferroelectric layer instead of a traditional dielectric layer, thereby gaining non-volatile memory functionality.
FMC CEO Thomas Rueckes explained: “The ferroelectric effect of hafnium oxide turns the DRAM capacitor into a non-volatile storage cell, achieving low power consumption while maintaining high performance, making it especially suitable for persistent memory demands in AI computing.”
The two companies will leverage Neumonda’s three major testing systems—Rhinoe, Octopus, and Raptor—to build a complete chain from R&D to mass production.
Neumonda CEO Peter Poechmueller stated: “Our ultimate goal is to rebuild Germany’s memory chip industry, and this collaboration is a key step forward.”
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