February 18 news, according to TheElec, the head of Samsung’s chip division personally visited Nvidia’s headquarters in the United States last week. The purpose of the visit was to showcase Samsung’s latest developed 1b DRAM chip samples, which are mainly used for high-bandwidth memory (HBM).
Sources revealed that Nvidia had requested Samsung to improve the design of its 1b DRAM last year, and the displayed samples were the results of these design improvements based on Nvidia’s requirements. It is rare for the head of Samsung’s Device Solutions (DS) division to personally present samples to customers.
The editor noted that Samsung had planned to use 1b DRAM to produce HBM last year but encountered yield and overheating issues. This DRAM belongs to the fifth-generation 10nm product, primarily used for HBM3E. Due to the aforementioned problems, Samsung had planned to switch to 1a DRAM (the predecessor of 1b DRAM) to produce HBM3E 8H and 12H, and even considered skipping 1b DRAM and directly using 1c DRAM for HBM4 production. However, since Nvidia insisted on using 1b DRAM, Samsung had to readjust its plans. The visit by Young Hyun Jun, Samsung’s Vice Chairman and head of the DS division, is likely to ensure that Samsung can secure Nvidia’s HBM3E orders.
Currently, Samsung’s competitor SK hynix has already supplied Nvidia with HBM3E 12H produced using 1b DRAM, and Micron is also expected to begin production of HBM required for Nvidia’s AI accelerators in the near future.
Last month, Samsung stated that its “improved” HBM3E preparation was progressing smoothly and planned to officially begin mass production and supply in the second quarter of this year. Young Hyun Jun, who is also in charge of the memory business under the DS division, is considered to have led the design improvements for the 1b DRAM, being an expert in the DRAM field.
At the CES event in January, Nvidia CEO Jensen Huang mentioned that Samsung needed to redesign its HBM to meet Nvidia’s qualification standards.
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