Samsung Electronics is currently facing difficulties due to legal issues involving its heir, Lee Jae-yong, which complicates his reinstatement as chairman.
In South Korea, Samsung Electronics is under strong competition from SK Hynix, particularly as the latter has secured a leading position in the HBM field.
Regarding foundry services, Samsung Electronics is stuck between TSMC and Intel. TSMC’s orders are soaring, solidifying its top position, while Intel is aggressively expanding its wafer foundry development.
Last week, Samsung Electronics announced plans to strengthen its collaboration with chip design company Arm to enhance its competitiveness in the foundry business.
From March 26-27, Samsung Electronics will host the MemCon 2024 global conference in Silicon Valley. The event will highlight its vision for CXL DRAM, viewed as the next-generation technology of HBM, intended to increase data processing speed and strengthen its standing in the AI storage chip market.
During the event, Samsung Electronics will present a keynote speech titled “Leading HBM and CXL Innovation in the AI Era, Realizing High Memory Bandwidth and High-Capacity Technical Products.”
The latest CXL DRAM product is scheduled for release this year. As the market is still in its early stages, Samsung Electronics has taken the lead, launching CXL DRAM in 2021 and planning to introduce CXL2.0 DRAM in the second quarter of this year.
Samsung Electronics has recently recognized that AI is the future for all companies, with storage chips playing a more prominent role. The demand for AI chips is set to increase not only in HBM but also in CXL.
Samsung Electronics revealed that it has developed the industry’s first HBM3E 12H DRAM, featuring a maximum bandwidth of 1,280GB/S and a capacity of 36GB. Compared to the 8H HBM3, both bandwidth and capacity have increased by 50%.
The product uses an advanced thermal compression non-conductive film (TC NCF), allowing the 12H HBM3E to maintain the same height as the 8H to meet packaging requirements.
The TC NCF is thinner than previously used films, removing gaps between stacks. The gap has been reduced to 7 microns, making the vertical density of the 12H HBM3E over 20% higher than the 8H.
A leak case has been reported, where a former employee of Samsung Electronics was indicted by a local prosecutor’s office in South Korea.
The employee, who worked at Samsung Electronics’ IP Center for over 20 years, is alleged to have opened a patent consulting firm in Japan in 2011 and leaked Samsung Electronics’ internal secrets.
The case will be tried on March 7.
Additionally, on Monday, Samsung Electronics announced its participation in an alliance led by American chip giant Nvidia. It will become a founding member of the AI-RAN alliance, established at this year’s World Mobile Congress (MWC) along with Nvidia, Arm, SoftBank, Ericsson, Nokia, Microsoft, and other semiconductor, telecommunications, and software giants.
The alliance aims to merge artificial intelligence and wireless communication technologies to form an ecosystem for 6G technology research and development.
Related:
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