Micron Announces Industry’s First 232-Layer 3D NAND Flash Memory

Micron, yesterday (May 12th,2022) announced the industry's first 3D NAND flash memory with 232 layers

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Micron, which yesterday (May12th,2022) announced the industry’s first 3D NAND flash memory with 232 layers, plans to use its new 232-layer 3D NAND products in a variety of products, including solid-state drives, and plans to begin mass production of such chips around the end of 2022.

From Micron

Micron’s 232-layer 3D NAND flash memory features a 3D TLC architecture with a raw capacity of 1Tb (128GB). The chip is based on Micron’s CuA architecture and uses NAND string stacking technology to create two 3D NAND arrays on top of each other.

The CuA design, coupled with 232 layers of NAND, will significantly reduce Micron’s 1Tb 3D TLC NAND flash chip size, which is expected to reduce production costs and allow Micron to price devices with these chips more competitively or increase its margins.

Micron did not announce the I/O speed or a number of planes for its new 232L 3D TLC NAND IC but hinted that the new memory will offer higher performance compared to existing 3D NAND devices, which will be particularly useful for next-generation SSDs with PCIe 5.0 interfaces.

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